Jae-Sung Roh
41Patents
11h-index
25Co-inventors
75Inventor score
Filing activity: Feb 14, 1994 → Jul 1, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7910452B2 | Method for fabricating a cylinder-type capacitor utilizing a connected ring structure | Electricity | 308 | Active |
| US7074668B1 | Capacitor of semiconductor device and method for forming the same | Electricity | 120 | Expired |
| US5783253A | Method for forming a dielectric film and method for fabricating a capacitor using the same | Chemistry; Metallurgy | 51 | Expired |
| US5728604A | Method for making thin film transistors | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5569619A | Method for forming a capacitor of a semiconductor memory cell | Electricity | 18 | Expired |
| US5629540A | Semiconductor device having overlapped storage electrodes | Electricity | 16 | Expired |
| US5753544A | Crystallization process and method of manufacturing thin film transistor using same | Electricity | 15 | Expired |
| US6060346A | Semiconductor device and method for manufacturing the same | Electricity | 14 | Expired |
| US6071770A | Semiconductor memory device and method for fabricating the same | Electricity | 13 | Expired |
| US7835134B2 | Capacitor and method for fabricating the same | Electricity | 11 | Active |
| US5476806A | Semiconductor device and method for making thereof | Electricity | 11 | Expired |
| US8134195B2 | Semiconductor device and method of fabricating the same | Electricity | 11 | Active |
| US5828129A | Semiconductor memory device including a capacitor having a top portion which is a diffusion barrier | Electricity | 8 | Expired |
| US7670903B2 | Method for fabricating a cylindrical capacitor using amorphous carbon-based layer | Electricity | 7 | Active |
| US6297091A | Method for fabricating contact pad for semiconductor device | Electricity | 6 | Expired |
| US8017491B2 | Method for fabricating capacitor | Electricity | 5 | Active |
| US6344965B1 | Capacitor using high dielectric constant film for semiconductor memory device and fabrication method therefor | Electricity | 5 | Expired |
| US6645811B2 | Capacitor using high dielectric constant film for semiconductor memory device and fabrication method therefor | Electricity | 5 | Expired |
| US7501320B2 | Semiconductor device with dielectric structure and method for fabricating the same | Electricity | 5 | Active |
| US7616426B2 | Capacitor and method for fabricating the same | Electricity | 5 | Active |
| US7772132B2 | Method for forming tetragonal zirconium oxide layer and method for fabricating capacitor having the same | Emerging Cross-Sectional Technologies | 4 | Active |
| US7416936B2 | Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the same | Electricity | 4 | Active |
| US7754577B2 | Method for fabricating capacitor | Electricity | 3 | Active |
| US6326252A | Method for fabricating MOS transistor having dual gate | Electricity | 3 | Expired |
| US7229888B2 | Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the same | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.