Registration and alignment technique for X-ray mask fabrication
US5570405A · kind A · utility
12Cited by
9References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Oct 29, 1996 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K1/06
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An X-ray mask includes one or more X-ray transparent mask windows and at least one pattern-to-mask alignment mark etched into the mask substrate from the same side as the mask windows. The pattern-to-mask alignment marks can be etched at the same time as the mask windows and are detectable from the front surface of the mask substrate by an electron beam lithography system prior to creating the circuit pattern. The alignment marks are detected by the absence of backscattered electrons at the pattern-to-mask alignment marks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.