Method of etching silicon carbide
US5571374A · kind A · utility
18Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1995 |
| Grant date | Nov 5, 1996 |
| Priority date | — |
| Expiry date | Oct 2, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mask (12) is applied to a silicon carbide substrate (11) in order to etch the substrate (11). The material used for the mask (12) has a Mohs hardness factor greater than 4 in order to prevent sputtering material from the mask (12) onto the substrate (11). An oxygen and sulfur hexafluoride plasma is utilized to perform the etch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.