Christine Thero
8Patents
7h-index
6Co-inventors
45Inventor score
Filing activity: Mar 6, 1995 → Aug 15, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5956578A | Method of fabricating vertical FET with Schottky diode | Electricity | 64 | Expired |
| US5700703A | Method of fabricating buried control elements in semiconductor devices | Emerging Cross-Sectional Technologies | 61 | Expired |
| US5569937A | High breakdown voltage silicon carbide transistor | Electricity | 37 | Expired |
| US5612232A | Method of fabricating semiconductor devices and the devices | Electricity | 23 | Expired |
| US5571374A | Method of etching silicon carbide | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5895260A | Method of fabricating semiconductor devices and the devices | Electricity | 11 | Expired |
| US5877047A | Lateral gate, vertical drift region transistor | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5693969A | MESFET having a termination layer in the channel layer | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.