Light valve device using semiconductive composite substrate
US5572045A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1995 |
| Grant date | Nov 5, 1996 |
| Priority date | — |
| Expiry date | Jun 2, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/135
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Herein disclosed are a semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film formed integrally with transistor elements is laminated on an insulating thin film and is formed with through holes and in which the insulating thin film is formed on its back with electrodes and a shielding film, and a light valve device using the semiconductor device. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate, which is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film, and a transparent opposite substrate, so that the optical transparency of the electrooptical substance is controlled by the switching elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.