Voltage-driven type semiconductor device
US5572048A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 17, 1993 |
| Grant date | Nov 5, 1996 |
| Priority date | — |
| Expiry date | Nov 17, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/406
Abstract
According to the present invention, a MOSFET is formed of an n source, a p well, an n drain and a MOS gate electrode, a bipolar transistor is formed of an n emitter, a p base and an n collector formed in sequential order adjacent to the n drain. These transistors are formed by being merged with each other by the contact of n drain and the n emitter of the same conductivity type. Holes are injected into the drain of a voltage-driven type transistor comprised of the MOSFET from the bipolar transistor having a very small collector saturation resistance. With this, it is possible to give rise to conductivity modulation in the drain of the MOSFET, while the power dissipation of the voltage-driven type semiconductor device becomes very small.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.