Method of fabricating semiconductor laser
US5573976A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1995 |
| Grant date | Nov 12, 1996 |
| Priority date | — |
| Expiry date | Nov 9, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a semiconductor laser includes forming an active layer including a compound semiconductor material on a semiconductor substrate, the compound semiconductor material having an energy band gap that monotonically increases as the growth temperature of the material rises above a certain growth temperature, including growing a window structure forming region including at least a region which serves as a waveguide in the proximity of a laser resonator facet at a higher temperature than a region outside the window structure forming region. Therefore, the band gap energy of the window structure forming region is larger than that of the region outside the window structure forming region. Therefore, a semiconductor laser having a window structure can easily be fabricated with a high yield and with great repeatability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.