CVD reactor apparatus
US5574247A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1994 |
| Grant date | Nov 12, 1996 |
| Priority date | — |
| Expiry date | Jun 21, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/54
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD reactor apparatus includes a substrate clamp for clamping a peripheral edge of the front of a substrate disposed in a CVD reactor and, dividing a space in the reactor into a first space adjacent the front of the substrate and a second space adjacent the backside of the substrate. The apparatus also includes a unit for cooling the surface temperature of an inner wall of the reactor to a temperature equal to or less than a deposition lower limit, and a unit for supplying a CVD gas to the first space adjacent the substrate front and supplying an inert gas to the second space adjacent the substrate backside at different pressures and causing a reaction at only the substrate front, a reaction gas monitor and a substrate temperature monitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.