Semiconductor device with monosilicon layer
US5574292A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 1993 |
| Grant date | Nov 12, 1996 |
| Priority date | — |
| Expiry date | May 5, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/105
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device has an integrated circuit formed in a monosilicon layer provided on an electrically insulative material. The monosilicon layer has an integrated circuit formed thereon, and a passivation film covers the integrated circuit. A support member is fixed to the electrically insulative material through an adhesive layer to support the monosilicon layer. The integrated circuit comprises an MIS transistor having a source region, drain region, and channel region formed in the monosilicon layer. The semiconductor device is suitable for use in a high speed, high capacity liquid crystal light valve having a structure where a pixel switching element group and a peripheral driver circuit are formed integrally on a common substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.