Semiconductor treatment apparatus
US5575854A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 30, 1994 |
| Grant date | Nov 19, 1996 |
| Priority date | — |
| Expiry date | Dec 30, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4482
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD apparatus in which a process gas containing a carrier gas and a raw material gas is supplied to a process chamber through a supply line. A first part of the carrier gas is supplied from a primary line through a bubbling line and passed through a raw material liquid to derive the raw material gas, and then sent to the supply line. A second part of the carrier gas is supplied from the primary line through a bypass line directly to the supply line. Electromagnetic valves are provided on each of the bubbling line and the bypass line and flow sensors are provided on each of the primary line and the supply line. Each flow sensor has a reference element and a heated element, each of which has a thermally-sensitive and electrically conductive wire. Signals from the sensors are supplied to a flow controller, which measures the flow rate of the raw material gas by comparing the measured value with a reference value, and adjusts the opening degrees of the electromagnetic valves on the basis of the comparison.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.