Method for making a metal to metal capacitor
US5576240A · kind A · utility
52Cited by
14References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1994 |
| Grant date | Nov 19, 1996 |
| Priority date | — |
| Expiry date | Dec 9, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/014
Abstract
A method for making a metal-to-metal capacitor for an integrated circuit includes forming a layer of titanium/titanium nitride on a polysilicon which has been patterned with interlevel dielectrics. A capacitor dielectric is then deposited, followed by patterning with photoresist to delineate the capacitor, etching to remove extraneous dielectric, deposition of aluminum, further patterning and etching to define the capacitor and access area, and removal of photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.