Inventor · Cary, NC, US

Ranbir Singh

97Patents
22h-index
59Co-inventors
91Inventor score

Filing activity: Oct 20, 1983 → Dec 28, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US4522657A Low temperature process for annealing shallow implanted N+/P junctions Electricity 283 Expired
US5719409A Silicon carbide metal-insulator semiconductor field effect transistor Electricity 178 Expired
US5831288A Silicon carbide metal-insulator semiconductor field effect transistor Electricity 100 Expired
US6107142A Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion Emerging Cross-Sectional Technologies 78 Expired
US6383879B1 Semiconductor device having a metal gate with a work function compatible with a semiconductor device Electricity 70 Expired
US5969378A Latch-up free power UMOS-bipolar transistor Electricity 69 Expired
US6121633A Latch-up free power MOS-bipolar transistor Electricity 67 Expired
US6100169A Methods of fabricating silicon carbide power devices by controlled annealing Emerging Cross-Sectional Technologies 66 Expired
US6956238B2 SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL Electricity 65 Expired
US6653659B2 Silicon carbide inversion channel mosfets Emerging Cross-Sectional Technologies 57 Expired
US6429041B1 Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation Emerging Cross-Sectional Technologies 54 Expired
US5576240A Method for making a metal to metal capacitor Emerging Cross-Sectional Technologies 52 Expired
US6673662B2 Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same Emerging Cross-Sectional Technologies 50 Expired
US7449762B1 Lateral epitaxial GaN metal insulator semiconductor field effect transistor Electricity 48 Active
US6329675A Self-aligned bipolar junction silicon carbide transistors Electricity 46 Expired
US6218254A Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices Electricity 45 Expired
US6191980A Single-poly non-volatile memory cell having low-capacitance erase gate Physics 42 Expired
US5387217A Disposable bone wire driver Human Necessities 36 Expired
US6512700B1 Non-volatile memory cell having channel initiated secondary electron injection programming mechanism Physics 34 Expired
US5654581A Integrated circuit capacitor Emerging Cross-Sectional Technologies 33 Expired
US6573128B1 Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same Emerging Cross-Sectional Technologies 31 Expired
US5721445A Semiconductor device with increased parasitic emitter resistance and improved latch-up immunity Emerging Cross-Sectional Technologies 30 Expired
US6281521A Silicon carbide horizontal channel buffered gate semiconductor devices Electricity 22 Expired
US6573149B2 Semiconductor device having a metal gate with a work function compatible with a semiconductor device Electricity 21 Expired
US5851870A Method for making a capacitor Emerging Cross-Sectional Technologies 21 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.