Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture
US5576247A · kind A · utility
38Cited by
6References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 27, 1993 |
| Grant date | Nov 19, 1996 |
| Priority date | — |
| Expiry date | Jul 27, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A BPSG layer serving as a silicon oxide layer is formed on a semiconductor substrate 1. Formed on the surface of the BPSG layer is a hydrophobic molecular layer comprising hydrophobic groups such as methyl, ethyl and the like, by a silylation reaction (in which silyl having hydrophobic groups such as methyl groups, ethyl groups and the like, is reacted with OH groups, and in which the hydrophobic groups are substituted with H of the OH groups to generate --O--Si(CH.sub.3).sub.3 or the like). The molecular layer prevents the BPSG layer from absorbing moisture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.