Heterojunction electron transfer device
US5576559A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 1, 1994 |
| Grant date | Nov 19, 1996 |
| Priority date | — |
| Expiry date | Nov 1, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A smooth and monotonic potential energy gradient was established at a p-type (InGa)As--undopad InP heterojunction to efficiently transfer conduction electrons from the (InGa)As:p layer to the InP:.o slashed. layer. This potential energy gradient was established with a compositionally graded p-type semiconductor alloy layer and an n-type InP built-in field layer interposed at the heterojunction. The compositionally graded semiconductor alloy layer spatially distributes the conduction band discontinuity of the (InGa)As--InP heterojunction and the InP:n built-in field layer eliminates potential energy barriers from the conduction band over a wide range of externally-applied biases including no externally applied bias. The smooth and monotonic potential energy gradient thus established promotes efficient transfer of the conduction electrons due to drift from the (InGa)As:p layer to the large bandgap InP collector layer where they contribute to the output current of any number of electronic devices. The utility of this potential energy grading structure was demonstrated in a transferred-electron photocathode device wherein the efficient transfer of photoelectrons from the (InGa)As:p abs…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.