Manufacturing method of semiconductor device which includes forming a silicon nitride layer using a Si, N, and F containing compound
US5578530A · kind A · utility
16Cited by
6References
24Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 12, 1995 |
| Grant date | Nov 26, 1996 |
| Priority date | — |
| Expiry date | Jul 12, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a manufacturing method of semiconductor device having a fluorine-containing SiN layer, an SiN layer excellent in the step coverage can be formed using as raw material an Si compound containing at least both nitrogen and fluorine, by virtue of an intermediate product which, during the formation of the above SiN layer, is formed, liable to polymerization and has fluidity. Moreover, as the above Si compound contains fluorine that is taken into the formation of the fluorine-containing SiN layer whose dielectric constant is lowered thereby, delay in circuit operation due to parasitic capacitances can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.