Monolithic high frequency integrated circuit structure having a grounded source configuration
US5578860A · kind A · utility
66Cited by
10References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 1995 |
| Grant date | Nov 26, 1996 |
| Priority date | — |
| Expiry date | May 1, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
Abstract
A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated circuit structure (10). The high frequency power FET device (22) includes a grounded source configuration. The logic structure (29) utilizes the high frequency power FET structure in a grounded source configuration as one device in a CMOS implementation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.