Daniel J. Lamey
13Patents
5h-index
17Co-inventors
63Inventor score
Filing activity: May 1, 1995 → May 12, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5578860A | Monolithic high frequency integrated circuit structure having a grounded source configuration | Electricity | 66 | Expired |
| US7368668B2 | Ground shields for semiconductors | Electricity | 48 | Expired |
| US6744117B2 | High frequency semiconductor device and method of manufacture | Electricity | 15 | Expired |
| US6222236A | Protection circuit and method for protecting a semiconductor device | Electricity | 11 | Expired |
| US8212321B2 | Semiconductor device with feedback control | Electricity | 5 | Active |
| US10574198B2 | Integrated circuit devices with selectively arranged through substrate vias and method of manufacture thereof | Electricity | 4 | Active |
| US7592673B2 | ESD protection circuit with isolated diode element and method thereof | Electricity | 2 | Active |
| US7508021B2 | RF power transistor device with high performance shunt capacitor and method thereof | Electricity | 2 | Active |
| US7589370B2 | RF power transistor with large periphery metal-insulator-silicon shunt capacitor | Electricity | 1 | Active |
| US12119300B2 | Transistor circuits with shielded reference transistors | Electricity | 0 | Active |
| US11804527B2 | Transistor with center fed gate | Electricity | 0 | Active |
| US8537512B2 | ESD protection using isolated diodes | Electricity | 0 | Active |
| US9093272B2 | Methods of forming electronic elements with ESD protection | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.