Method of forming a conductive film on an insulating region of a substrate
US5580615A · kind A · utility
28Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1994 |
| Grant date | Dec 3, 1996 |
| Priority date | — |
| Expiry date | Apr 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a conductive film on an insulating region of a substrate wherein a surface of the insulating region formed on the substrate is activated by irradiating the surface with electrons, ions or light. Next, a metal film pattern constituting, for example, an electrical interconnection, is deposited on the surface by applying a selective chemical vapor deposition process using a metal halide gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.