Patent · US Expired

Electro-luminescent material, solid state electro-luminescent device and process for fabrication thereof

US5580663A · kind A · utility

8Cited by
4References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 30, 1994
Grant dateDec 3, 1996
Priority date
Expiry dateSep 30, 2014

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S428/917

Abstract

An electro-luminescent material and solid state electro-luminescent device comprising a mixed material layer formed of a mixture of silicon and silicon oxide doped with rare earth ions so as to show intense room-temperature photo- and electro-luminescence is described. The luminescence is due to internal transitions of the rare earth ions. The mixed material layer has an oxygen content ranging from 1 to 65 atomic % and is produced by vapor deposition and rare earth ions implant. A separated implant with elements of the V or III column of the periodic table of elements gives rise to a PN junction. The so obtained structure is then subjected to thermal treatment in the range 400.degree.-1100.degree. C.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.