Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam
US5580808A · kind A · utility
2Cited by
9References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1994 |
| Grant date | Dec 3, 1996 |
| Priority date | — |
| Expiry date | Oct 24, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.