Bipolar transistors using isolated selective doping to improve performance characteristics
US5581115A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1994 |
| Grant date | Dec 3, 1996 |
| Priority date | — |
| Expiry date | Oct 7, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/01
Abstract
Parts of the emitter and base of a vertical bipolar transistor adjoin a field-isolation region to form a walled-emitter structure. The transistor is furnished with extra doping in the collector and, optionally, in the base. The extra collector doping is provided along collector-base junction below the intrinsic base to create a special collector zone spaced laterally apart from the field-isolation region. The presence of the special collector zone causes the intrinsic base to be thinner, thereby raising the cutoff frequency and overall current gain. The extra base doping is provided in the intrinsic base along the field-isolation region to improve the transistor's breakdown voltage and leakage current characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.