Inventor · Milpitas, CA, US

Constantin Bulucea

71Patents
24h-index
33Co-inventors
88Inventor score

Filing activity: Dec 27, 1988 → Dec 14, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US5072266A Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry Emerging Cross-Sectional Technologies 286 Expired
US6548842B1 Field-effect transistor for alleviating short-channel effects Electricity 175 Expired
US6020227A Fabrication of multiple field-effect transistor structure having local threshold-adjust doping Electricity 152 Expired
US5952701A Design and fabrication of semiconductor structure having complementary channel-junction insulated-gate field-effect transistors whose gate electrodes have work functions close to mid-gap semiconductor value Electricity 123 Expired
US8163619B2 Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone Electricity 119 Active
US7595243B1 Fabrication of semiconductor structure having N-channel channel-junction field-effect transistor Electricity 106 Active
US5744372A Fabrication of complementary field-effect transistors each having multi-part channel Electricity 97 Expired
US8258026B2 Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications Electricity 96 Active
US6566204B1 Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors Electricity 78 Expired
US5866931A DMOS power transistor with reduced number of contacts using integrated body-source connections Electricity 73 Expired
US6078082A Field-effect transistor having multi-part channel Electricity 70 Expired
US6127700A Field-effect transistor having local threshold-adjust doping Electricity 67 Expired
US5298442A Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry Emerging Cross-Sectional Technologies 62 Expired
US7176530B1 Configuration and fabrication of semiconductor structure having n-channel channel-junction field-effect transistor Electricity 59 Expired
US5410170A DMOS power transistors with reduced number of contacts using integrated body-source connections Electricity 44 Expired
US5441900A CMOS latchup suppression by localized minority carrier lifetime reduction Emerging Cross-Sectional Technologies 38 Expired
US5217907A Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction Emerging Cross-Sectional Technologies 35 Expired
US7145191B1 P-channel field-effect transistor with reduced junction capacitance Electricity 31 Expired
US5698459A Fabrication of bipolar transistors using selective doping to improve performance characteristics Emerging Cross-Sectional Technologies 29 Expired
US8101479B2 Fabrication of asymmetric field-effect transistors using L-shaped spacers Electricity 29 Active
US6599804B2 Fabrication of field-effect transistor for alleviating short-channel effects Electricity 28 Expired
US7419863B1 Fabrication of semiconductor structure in which complementary field-effect transistors each have hypoabrupt body dopant distribution below at least one source/drain zone Electricity 24 Active
US6627950B1 Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry Emerging Cross-Sectional Technologies 24 Expired
US7081663B2 Gate-enhanced junction varactor with gradual capacitance variation Electricity 24 Expired
US7642574B2 Semiconductor architecture having field-effect transistors especially suitable for analog applications Electricity 23 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.