Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors
US5581324A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 1995 |
| Grant date | Dec 3, 1996 |
| Priority date | — |
| Expiry date | May 22, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70983
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A projection exposure apparatus has a light source for emitting illumination light, an illumination optical system for illuminating a mask, on which a predetermined pattern is formed, with the illumination light, and a projection optical system for forming an image of the pattern on a photosensitive substrate, and images the image of the pattern on the photosensitive substrate in a predetermined imaging state. The apparatus also includes a temperature measurement sensor for measuring a change in temperature of the mask, a control system for calculating the change amount of the imaging state caused by the change in temperature, and a correction system for correcting the change in imaging state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.