Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI
US5583059A · kind A · utility
76Cited by
14References
11Claims
0Family size
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Key dates
| Filing date | Jun 1, 1994 |
| Grant date | Dec 10, 1996 |
| Priority date | — |
| Expiry date | Jun 1, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/15
Abstract
A SiGe-HBT structure for device integration on thin-SOI substrates is disclosed. The emitter and base regions are vertical while the collector contact is lateral in the otherwise MOS-like device structure. This allows one to integrate a SiGe base, the device capacitances are reduced, and the transistor can be combined with fully-depleted CMOS in a SOI-BiCMOS technology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.