Method for manufacturing field effect controlled semiconductor components

US5583060A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Helmut Hertrich · Dingolfing, DE
• Helmut Strack · Hersbruck, DE
• Jenoe Tihanyi · Tauberbischofsheim, DE

Key dates

• Filing date: Nov 3, 1995
• Grant date: Dec 10, 1996
• Expiry date: Nov 3, 2015

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/126

Abstract

The base zones of MOSFETs and IGBTs are generated by implanting dopants of the second conductivity type into the surface of a first layer of the first conductivity type, and a second layer of the first conductivity type is deposited thereon. During the deposition, the dopants diffuse up to the surface of the second layer and form base zones. The base zones are thereby provided with a laterally expanded region of high conductivity under the surface through which the minority carriers can flow off to the source electrode with low voltage drop.