Method for fabricating a planar dielectric
US5583078A · kind A · utility
18Cited by
4References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Dec 10, 1996 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Re-entrant angles in doped dielectrics produced from the decomposition of organo-silicon compounds are reduced or eliminated by the addition of a polar molecule to the dielectric deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.