Method for manufacturing a semiconductor device containing a crystallization promoting material
US5585291A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1994 |
| Grant date | Dec 17, 1996 |
| Priority date | — |
| Expiry date | Nov 29, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/918
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device having a crystalline silicon semiconductor layer comprises the steps of heat crystallizing an amorphous silicon semiconductor layer at a relatively low temperature because of the use of a crystallization promoting material such as Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, P, As, and Sb. The crystallization promoting material is introduced by mixing it within a liquid precursor material for forming silicon oxide and coating the precursor material onto the amorphous silicon film. Thus, it is possible to add the crystallization promoting material into the amorphous silicon film at a minimum density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.