Semiconductor laser device with a misoriented substrate
US5586136A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 1994 |
| Grant date | Dec 17, 1996 |
| Priority date | — |
| Expiry date | Jul 1, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3403
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9.degree. to 17.degree. from a {100} plane of the substrate in a <011> direction, and the cavity length is not less than 150 .mu.m nor more than 300 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.