Lateral field-effect-controlled semiconductor device on insulating substrate

US5587595A · kind A · utility

Assignee

• Daimler-Benz AG · DE

Inventors

• Horst Neubrand · Frankfurt, DE
• Jacek Korec · San Jose, US
• Erhart Stein · Senftenberg - Zły Komorow, DE
• Dieter Silber · Eschborn, DE

Key dates

• Filing date: Feb 21, 1995
• Grant date: Dec 24, 1996
• Expiry date: Feb 21, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/135

Abstract

A field-effect-controlled semiconductor device has a cathode, an anode, and a gate, and extends laterally on a first insulating layer covering a substrate. The device includes a main thyristor, a MOSFET switch and a diode which connects a highly doped region embedded in a first part of a second base region of the thyristor to the cathode of the device.