Inventor · San Jose, CA, US

Jacek Korec

59Patents
22h-index
44Co-inventors
88Inventor score

Filing activity: May 26, 1994 → Mar 17, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6049108A Trench-gated MOSFET with bidirectional voltage clamping Electricity 313 Expired
US6078090A Trench-gated Schottky diode with integral clamping diode Electricity 163 Expired
US6285060A Barrier accumulation-mode MOSFET Electricity 122 Expired
US5488236A Latch-up resistant bipolar transistor with trench IGFET and buried collector Electricity 119 Expired
US6392290B1 Vertical structure for semiconductor wafer-level chip scale packages Electricity 89 Expired
US7282765B2 Power LDMOS transistor Electricity 89 Expired
US6838722B2 Structures of and methods of fabricating trench-gated MIS devices Emerging Cross-Sectional Technologies 65 Expired
US7235845B2 Power LDMOS transistor Electricity 55 Expired
US7005347B1 Structures of and methods of fabricating trench-gated MIS devices Emerging Cross-Sectional Technologies 46 Expired
US5471075A Dual-channel emitter switched thyristor with trench gate Electricity 44 Expired
US7420247B2 Power LDMOS transistor Electricity 42 Active
US7589378B2 Power LDMOS transistor Electricity 41 Active
US7745846B2 LDMOS integrated Schottky diode Electricity 38 Active
US7446375B2 Quasi-vertical LDMOS device having closed cell layout Electricity 38 Active
US7952145B2 MOS transistor device in common source configuration Electricity 35 Active
US8674440B2 Power device integration on a common substrate Electricity 33 Active
US7335946B1 Structures of and methods of fabricating trench-gated MIS devices Emerging Cross-Sectional Technologies 33 Expired
US7186609B2 Method of fabricating trench junction barrier rectifier Electricity 32 Expired
US5747831A SIC field-effect transistor array with ring type trenches and method of producing them Electricity 32 Expired
US6348712B1 High density trench-gated power MOSFET Electricity 27 Expired
US7560808B2 Chip scale power LDMOS device Electricity 25 Active
US8847310B1 Power device integration on a common substrate Electricity 23 Active
US6538300B1 Precision high-frequency capacitor formed on semiconductor substrate Electricity 20 Expired
US8994115B2 Power device integration on a common substrate Electricity 20 Active
US8994105B2 Power device integration on a common substrate Electricity 18 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.