Method of forming an alloyed drain field effect transistor and device formed
US5589408A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1995 |
| Grant date | Dec 31, 1996 |
| Priority date | — |
| Expiry date | Jul 5, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
A method of forming an alloyed drain field effect transistor (10). A field effect transistor and a bipolar transistor are formed in a portion of a monocrystalline semiconductor substrate (11) that is bounded by a first major surface (12). A control electrode (19) is isolated from the first major surface by a dielectric layer (18). A first current conducting electrode (23) contacts a portion of the first major surface (12). A second current conducting electrode (24) contacts another portion of the monocrystalline semiconductor substrate (11) and is capable of injecting minority carriers into the monocrystalline semiconductor substrate (11). In one embodiment, the second current conducting electrode contacts a second major surface (13) of the monocrystalline semiconductor substrate (11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.