Method of making increased-density flash EPROM that utilizes a series of planarized, self-aligned, intermediate strips of conductive material to contact the drain regions
US5589412A · kind A · utility
16Cited by
11References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 1, 1995 |
| Grant date | Dec 31, 1996 |
| Priority date | — |
| Expiry date | Jun 1, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A series of self-aligned, intermediate strips of conductive material, which contact each of the drain regions in a corresponding number of columns of drain regions in a flash electrically programmable read-only-memory (EPROM), are formed as a thick layer of planarized polysilicon. By utilizing intermediate strips of conductive material which are formed from a thick layer of polysilicon, the formation of cracks or voids in the intermediate strips of conductive material can be eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.