Method of forming a resist pattern by using a silicon carbide anti-reflective layer
US5591566A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Jan 7, 1997 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, a method of forming the anti-reflective layer therewith and a method of forming a resist pattern using a novel anti-reflective layer obtained therewith. The optimum condition of the anti-reflective layer is determined and the anti-reflective layer is formed by the methods described below. Further, an optimal anti-reflective layer is obtained by the method which is used for forming the resist pattern. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.