Method of manufacturing Si-Ge thin film transistor
US5591653A · kind A · utility
31Cited by
12References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 1995 |
| Grant date | Jan 7, 1997 |
| Priority date | — |
| Expiry date | May 15, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/058
Abstract
The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.