Method of nitridization of titanium thin films
US5593511A · kind A · utility
43Cited by
110References
10Claims
0Family size
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Key dates
| Filing date | Dec 6, 1995 |
| Grant date | Jan 14, 1997 |
| Priority date | — |
| Expiry date | Dec 6, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Titanium films are nitrided at temperatures less than 650.degree. C., and preferably between 400.degree. C. and 500.degree. C., by treating the titanium film with a plasma formed from a nitriding gas at elevated temperatures. The plasma is created by subjecting the nitriding gas to RF energy, preferably an electrode having a frequency of 13.56 MHz or less. The reaction temperature can be reduced by lowering the plasma frequency to less than 500 KHz. This provides for nitridization at temperatures of 480.degree. C. and lower.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.