Method of forming contact pads for wafer level testing and burn-in of semiconductor dice
US5593903A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 1996 |
| Grant date | Jan 14, 1997 |
| Priority date | — |
| Expiry date | Mar 4, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of forming contact pads (140) that allows for wafer level testing and burn-in of semiconductor die (22). A plurality of semiconductor die (22) are formed upon a semiconductor wafer (20), each semiconductor die (22) having a plurality of bonding pads (78). A contact pad (140) is formed overlying each bonding pad (78) and is electrically coupled to the bonding pad (78) and to wafer test pads (38) through vertical and/or horizontal wafer conductors (42-47 and 52-53 respectively) so that each semiconductor die (22) is uniquely identified. Contact pads (140) protect underlying bonding pads (78) during the formation and removal of vertical and/or horizontal wafer conductors (42-47 and 52-53 respectively). Thus, wafer level electrical testing and/or burn-in can be performed prior to designating a final packaging method for the semiconductor die (22).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.