Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link
US5593905A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1995 |
| Grant date | Jan 14, 1997 |
| Priority date | — |
| Expiry date | Feb 23, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/011
Abstract
A bipolar transistor (100) and a method for forming the same. A base-link diffusion source layer (118) is formed over a portion of the collector region (102). The base-link diffusion source layer (118) comprises a material that is capable of being used as a dopant source and is capable of being etched selectively with respect to silicon. A barrier layer (119) is formed over the base-link diffusion source layer (118).A base electrode (114) is formed over at least one end portion of the barrier layer (119) and base-link diffusion source layer (118) and the exposed portions of the barrier layer (119) and underlying base-link diffusion source layer (118) are removed. An extrinsic base region (110) is diffused from the base electrode (114) and a base link-up region (112) is diffused from the base-link diffusion source layer (118). Processing may then continue to fore an intrinsic base region (108), emitter region (126), and emitter electrode (124).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.