F. Scott Johnson
20Patents
10h-index
10Co-inventors
68Inventor score
Filing activity: Jan 9, 1995 → Aug 4, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6441715B1 | Method of fabricating a miniaturized integrated circuit inductor and transformer fabrication | Emerging Cross-Sectional Technologies | 77 | Expired |
| US6030874A | Doped polysilicon to retard boron diffusion into and through thin gate dielectrics | Electricity | 57 | Expired |
| US6239477A | Self-aligned transistor contact for epitaxial layers | Electricity | 24 | Expired |
| US5592017A | Self-aligned double poly BJT using sige spacers as extrinsic base contacts | Electricity | 20 | Expired |
| US5593905A | Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link | Emerging Cross-Sectional Technologies | 17 | Expired |
| US6028345A | Reduced resistance base contact for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5629556A | High speed bipolar transistor using a patterned etch stop and diffusion source | Electricity | 12 | Expired |
| US6501152B1 | Advanced lateral PNP by implant negation | Electricity | 11 | Expired |
| US5502330A | Stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6248650A | Self-aligned BJT emitter contact | Electricity | 11 | Expired |
| US5616508A | High speed bipolar transistor using a patterned etch stop and diffusion source | Electricity | 7 | Expired |
| US5541121A | Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6380609B1 | Silicided undoped polysilicon for capacitor bottom plate | Electricity | 3 | Expired |
| US6194280A | Method for forming a self-aligned BJT emitter contact | Electricity | 3 | Expired |
| US6620700B2 | Silicided undoped polysilicon for capacitor bottom plate | Electricity | 3 | Expired |
| US6281530A | LPNP utilizing base ballast resistor | Electricity | 3 | Expired |
| US6682994B2 | Methods for transistor gate formation using gate sidewall implantation | Electricity | 2 | Expired |
| US7098098B2 | Methods for transistors formation using selective gate implantation | Electricity | 1 | Expired |
| US7572693B2 | Methods for transistor formation using selective gate implantation | Electricity | 0 | Active |
| US6645804B1 | System for fabricating a metal/anti-reflective coating/insulator/metal (MAIM) capacitor | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.