Method of manufacturing high performance bipolar transistors in a BICMOS process
US5594268A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 3, 1994 |
| Grant date | Jan 14, 1997 |
| Priority date | — |
| Expiry date | Aug 3, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/124
Abstract
A BiCMOS manufacturing process for fabricating an emitter of a bipolar transistor includes the steps of forming footings on a silicon substrate for prospectively bearing edges of the emitter, forming a polysilicon emitter having a medial portion overlying the silicon substrate and lateral edges on the footings, removing the footings leaving notches at the lateral edges of the polysilicon emitter and refilling the notches with a thin polysilicon film. The bipolar transistor in a BiCMOS integrated circuit resulting from this process includes a silicon semiconductor substrate having a substantially flat surface, a field oxide film laterally bounding the silicon semiconductor substrate and a polysilicon emitter abutting the flat surface of the silicon semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.