Johan Darmawan
13Patents
8h-index
7Co-inventors
65Inventor score
Filing activity: Aug 12, 1988 → Jun 13, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7061057B2 | Laterally diffused MOS transistor having N+ source contact to N-doped substrate | Electricity | 27 | Expired |
| US6740548B2 | Method of manufacture of silicon on insulator device with improved heat removal | Electricity | 20 | Expired |
| US6900501B2 | Silicon on insulator device with improved heat removal | Electricity | 19 | Expired |
| US5994759A | Semiconductor-on-insulator structure with reduced parasitic capacitance | Electricity | 15 | Expired |
| US4853344A | Method of integrated circuit isolation oxidizing walls of isolation slot, growing expitaxial layer over isolation slot, and oxidizing epitaxial layer over isolation slot | Electricity | 14 | Expired |
| US6727127B1 | Laterally diffused MOS transistor (LDMOS) and method of making same | Electricity | 12 | Expired |
| US7307314B2 | LDMOS transistor with improved gate shield | Electricity | 10 | Expired |
| US6265248A | Method for producing semiconductor-on-insulator structure with reduced parasitic capacitance | Electricity | 9 | Expired |
| USRE42403E1 | Laterally diffused MOS transistor having N+ source contact to N-doped substrate | General | 5 | Active |
| US5681765A | Process for fabricating single polysilicon high performance BICMOS | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6548869B2 | Voltage limiting protection for high frequency power device | Electricity | 3 | Expired |
| US5786222A | Method of manufacturing high performance bipolar transistors in a BiCMOS process | Emerging Cross-Sectional Technologies | 0 | Expired |
| US5594268A | Method of manufacturing high performance bipolar transistors in a BICMOS process | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.