Titanium nitride and multilayers formed by chemical vapor deposition of titanium halides
US5595784A · kind A · utility
Inventors
Key dates
| Filing date | Aug 18, 1995 |
| Grant date | Jan 21, 1997 |
| Priority date | — |
| Expiry date | Aug 18, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gaseous mixture of a titanium halide and silane is introduced to a plasma or thermal CVD reactor to induce a reaction such that a conformal and pure titanium film is deposited onto a semiconductor device within the reactor. The titanium halide has a chemical form of TiX.sub.4, where X is a halogen. Other gaseous combinations of the titanium halide, ammonia, hydrogen, a halogen and silane are subjected to plasma or thermal CVD to induce a reaction to deposit titanium silicide and titanium nitride films onto the semiconductor device. Successive CVD processes create bilayers of TiSi.sub.x /TiN or Ti/TiN, and/or trilayers of TiSi.sub.x /Ti/TiN onto the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.