Robert Kaim
32Patents
11h-index
39Co-inventors
75Inventor score
Filing activity: Nov 6, 1987 → Nov 17, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5595784A | Titanium nitride and multilayers formed by chemical vapor deposition of titanium halides | Electricity | 99 | Expired |
| US4922106A | Ion beam scanning method and apparatus | Electricity | 93 | Expired |
| US4980562A | Method and apparatus for high efficiency scanning in an ion implanter | Electricity | 66 | Expired |
| US5996528A | Method and apparatus for flowing gases into a manifold at high potential | Electricity | 39 | Expired |
| US7966879B2 | Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel | Emerging Cross-Sectional Technologies | 22 | Active |
| US8062965B2 | Isotopically-enriched boron-containing compounds, and methods of making and using same | Emerging Cross-Sectional Technologies | 18 | Active |
| US8237134B2 | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system | Emerging Cross-Sectional Technologies | 15 | Active |
| US7943204B2 | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation | Electricity | 14 | Active |
| US8603252B2 | Cleaning of semiconductor processing systems | Electricity | 13 | Active |
| US7057192B2 | Radial scan arm and collimator for serial processing of semiconductor wafers with ribbon beams | Electricity | 12 | Expired |
| US8796131B2 | Ion implantation system and method | Electricity | 11 | Active |
| US8598022B2 | Isotopically-enriched boron-containing compounds, and methods of making and using same | Emerging Cross-Sectional Technologies | 9 | Active |
| US7819981B2 | Methods for cleaning ion implanter components | Electricity | 8 | Active |
| US8779383B2 | Enriched silicon precursor compositions and apparatus and processes for utilizing same | Electricity | 8 | Active |
| US8399865B2 | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system | Emerging Cross-Sectional Technologies | 8 | Active |
| US8389068B2 | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation | Electricity | 7 | Active |
| US8555705B2 | Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel | Emerging Cross-Sectional Technologies | 6 | Active |
| US8785889B2 | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system | Emerging Cross-Sectional Technologies | 4 | Active |
| US9111860B2 | Ion implantation system and method | Electricity | 3 | Active |
| US8138071B2 | Isotopically-enriched boron-containing compounds, and methods of making and using same | Electricity | 2 | Active |
| US9012874B2 | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system | Emerging Cross-Sectional Technologies | 2 | Active |
| US9170246B2 | Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel | Emerging Cross-Sectional Technologies | 2 | Active |
| US9754786B2 | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system | Emerging Cross-Sectional Technologies | 2 | Active |
| US9142387B2 | Isotopically-enriched boron-containing compounds, and methods of making and using same | Emerging Cross-Sectional Technologies | 2 | Active |
| US9171725B2 | Enriched silicon precursor compositions and apparatus and processes for utilizing same | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.