Silicon oxide film evaluation method
US5595916A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1994 |
| Grant date | Jan 21, 1997 |
| Priority date | — |
| Expiry date | Mar 29, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In a silicon oxide film evaluation method for evaluating the silicon oxide film formed on a silicon substrate, radiation of a plurality of incident angles is irradiated to the silicon oxide film, reflected radiation of the radiation of the plural incident angles on the silicon oxide film is measured, reflectances for the radiation of the plural incident angles is computed, based on the radiation of the plural incident angles and reflected radiation thereof, a dielectric function is computed, based on the reflectances for the plural incident angles, and film quality of the silicon oxide film is evaluated, based on the dielectric function. The silicon oxide film evaluation method and apparatus can evaluate film quality of the silicon oxide film formed on the silicon substrate in non-contact and non-destructively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.