Method for fabricating semiconductor device with interconnections buried in trenches
US5595937A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 12, 1996 |
| Grant date | Jan 21, 1997 |
| Priority date | — |
| Expiry date | Apr 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon oxide film is formed on a silicon substrate with a diffusion layer, and a contact hole is formed in the silicon oxide film. A protective film made of an oxide film and a nitride film is formed over the whole surface of the substrate, and the contact hole is buried with a BPSG film. Another silicon oxide film is deposited over the substrate and an interconnection trench is formed in this silicon oxide film. After the BPSG film is removed, a TiN/Ti film is formed over the whole surface of the substrate. A Cu film is grown by MO-CVD, and thereafter the Cu film and TiN/Ti film on the surface of the substrate are partially removed by CMP. A highly reliable contact plug and a trench burying higher level interconnection are formed even where contacts are margin-less or where alignment errors are present.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.