Method of forming fine patterns
US5595941A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Feb 27, 1995 |
| Grant date | Jan 21, 1997 |
| Priority date | — |
| Expiry date | Feb 27, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Sidewalls of patterned resist are reformed using a reforming agent selected from the group consisting of (a) a carbon trichloride radical, (b) a mixture of silicon ion and oxygen ion, (c) a mixture of carbon ion and carbon monoxide ion, (d) a chlorine radical, (e) aluminum trichloride liquid and (f) dibutyl magnesium liquid, and sidewall reformed portions are thus formed on the sidewalls of pattern resist. The not reformed portion of the patterned resist is removed away, and sidewall reformed portions are left on an object layer. The portion of object layer excluding the portion immediately below sidewall reformed portions is etched away, and fine patterns of object layer are formed as a result.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.