High sensitivity silicon avalanche photodiode
US5596186A · kind A · utility
36Cited by
4References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 6, 1994 |
| Grant date | Jan 21, 1997 |
| Priority date | — |
| Expiry date | Dec 6, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A silicon avalanche photodiode for ultraviolet light detection having a p.sup.+ -layer, an n-layer, an n.sup.- -layer and an n.sup.+ -silicon substrate in the order from the entrance side of the ultraviolet light, wherein the p.sup.+ -layer has a thickness at least equal to 0.7/.alpha. in which .alpha. is the absorption coefficient of silicon to the ultraviolet light. Also, a divided silicon avalanche photodiode provided with a photosensor array comprising plural light-receiving areas arranged in a matrix and having a guard ring only at the external periphery of the photosensor array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.