Hot carrier-hard gate oxides by nitrogen implantation before gate oxidation
US5596218A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1993 |
| Grant date | Jan 21, 1997 |
| Priority date | — |
| Expiry date | Oct 18, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A CMOS device is provided having a high concentration of nitrogen atoms at the SiO.sub.2 /Si interface reducing hot carrier effects associated with operating shorter devices at voltage levels typically used with longer devices. In one embodiment, the process for providing the CMOS device resistant to hot carrier effects makes use of a sacrificial oxide layer through which the nitrogen atoms are implanted and is then removed. Following removal of the sacrificial oxide layer, a gate oxide is grown giving a CMOS device having high nitrogen concentration at the SiO.sub.2 /Si interface. In an alternate embodiment, nitrogen atoms are implanted through the final gate oxide using an implantation energy which does not damage the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.