Process for using microwave plasma CVD
US5597623A · kind A · utility
7Cited by
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15Claims
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Key dates
| Filing date | Sep 16, 1994 |
| Grant date | Jan 28, 1997 |
| Priority date | — |
| Expiry date | Sep 16, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32467
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved microwave plasma CVD process for forming a functional deposited film using a microwave transmissive window composed of a sintered alpha-alumina ceramics body containing alpha-alumina as a matrix comprised of fine particles with a mean particle size d satisfying the equation 0.5 .mu.m.ltoreq.d.ltoreq.50 .mu.m and with a ratio of .rho..sub.2 /.rho..sub.1 between the theoretical density .rho..sub.1 and the bulk density .rho..sub.2 satisfying the equation 0.800.ltoreq..rho..sub.2 /.rho..sub.1 .ltoreq.0.995.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.