Method of forming a Ga.sub.2 O.sub.3 dielectric layer
US5597768A · kind A · utility
21Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1996 |
| Grant date | Jan 28, 1997 |
| Priority date | — |
| Expiry date | Mar 21, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a dielectric layer on a supporting structure of III-V material having a clean and atomically ordered surface to be coated with a dielectric layer including the step of depositing a layer of Ga.sub.2 O.sub.3, having a sublimation temperature, on the surface of the supporting structure by evaporation using a high purity single crystal of material including Ga.sub.2 O.sub.3 and a second oxide with a melting point greater than 700.degree. C. above the sublimation temperature of the Ga.sub.2 O.sub.3. The evaporation can be performed by any one of thermal evaporation, electron beam evaporation, and laser ablation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.