Compound semiconductor and method of manufacturing the same
US5599389A · kind A · utility
44Cited by
7References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 14, 1994 |
| Grant date | Feb 4, 1997 |
| Priority date | — |
| Expiry date | Nov 14, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02546
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to this invention, there is provided a compound semiconductor substrate including, on a compound semiconductor base containing a high-concentration impurity, a high-resistance single-crystal layer consisting of the same compound semiconductor as the compound semiconductor constituting the base. Active elements are formed in the high-resistance single-crystal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.